Channel Type | N |
Maximum Continuous Drain Current | 13 A |
Maximum Drain Source Voltage | 600 V |
Package Type | TO-220 |
Mounting Type | Through Hole |
Pin Count | 3 |
Maximum Drain Source Resistance | 550 m? |
Channel Mode | Enhancement |
Maximum Gate Threshold Voltage | 4.5V |
Minimum Gate Threshold Voltage | 3V |
Maximum Power Dissipation | 150 W |
Transistor Configuration | Single |
Maximum Gate Source Voltage | -30 V, +30 V |
Number of Elements per Chip | 1 |
Height | 9.15mm |
Transistor Material | Si |
Typical Gate Charge @ Vgs | 66 nC @ 10 V |
Series | MDmesh, SuperMESH |
Length | 10.4mm |
Maximum Operating Temperature | +150 ?C |
Width | 4.6mm |
Minimum Operating Temperature | -55 ?C |