description ? P-channel ? Enhancement mode ? Logic Level ? 175?C operating temperature ? Avalanche rated ? dv/dt rated ? Pb-free lead plating; RoHS compliant
The HGTG10N120BND is a Non-Punch Through (NPT) IGBT design. This is a new member of the MOS gated high voltage switching IGBT family. IGBTs combine the best features of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low on state conduction loss of a bipolar transistor. The IGBT used is the development type TA49290. The Diode used is the development type TA49189. The IGBT is ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential, such as: AC and DC motor controls, power supplies and drivers for solenoids, relays and contactors. Features ? 35A, 1200V, TC = 25?C ? 1200V Switching SOA Capability ? Typical Fall Time. . . . . . . . . . . . . . . . 140ns at TJ = 150?C ? Short Circuit Rating ? Low Conduction Loss
The 110N04 electronic component is brought into production by VISHAY, included in Transistors. Each device is available in a small TO-263 package and specified over the extended temperature range of -40?C to 105?C (TA).
Condition: new: a brand-new, unused, unopened, undamaged item in its original packaging
Generic MCU IC MICROCHIP DIP-8 PIC12F629-I/P 12F629-I/P 12F629 WC
|Feature||A3977 Microstepping DMOS Driver with Translator Features and Benefits ? ?2.5 A, 35 V output rating ?.|
Features ? -17A, -60V, RDS(on) = 0.12? @VGS = -10 V ? Low gate charge ( typical 21 nC) ? Low Crss ( typical 80 pF) ? Fast switching ? 100% avalanche tested ? Improved dv/dt capability ? 175?C maximum junction temperature rating
|Feature||SIPMOS? Power-Transistor Features ? P-Channel ? Enhancement mode ? Avalanche rated ? dv /dt rated ? .|