| Type | Single Switch IGBT Module |
| Manufacturer | Dynex Semiconductor |
| Rated Current (IC) | 800 A (at 90 °C) |
| Collector-Emitter Voltage (VCEO) | 3300 V nominal |
| Saturation Voltage (VCE(sat)) | ~2.8 V |
| Total Switching Energy (Esw) | ~2950 mJ @ Tc = 125 °C |
| Thermal Resistance (Rth (j-c)) | 12 °C/kW per switch |
| Baseplate Dimensions | 140 × 130 mm |
| Isolation Voltage | 6 kV |
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