Out of stock
FEATURES
? Ultra Low Gate Charge
? Reduced Gate Drive Requirement
? Enhanced 30 V VGS Rating
? Reduced Ciss, Coss, Crss
? Isolated Central Mounting Hole
? Dynamic dV/dt Rating
? Repetitive Avalanche Rated
? Lead (Pb)-free Available
DESCRIPTION
This new series of low charge Power MOSFETs achieve
significantly lower gate charge over conventional MOSFETs.
Utilizing advanced Power MOSFETs technology the device
improvements allow for reduced gate drive requirements,
faster switching speeds and increased total system savings.
These device improvements combined with the proven
ruggedness and reliabiltity of Power MOSFETs offer the
designer a new standard in power transistors for switching
applications.
The TO-247 package is preferred for commercial-industrial
applications where higher power levels preclude the use of
TO-220 devices. The TO-247 is similar but superior to the
earlier TO-218 package because its isolated mounting hole.






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Free exchange on all products till 10 days from the date of delivery