TSM2309CX RFG

Product Description:

The TSM2309CX RFG is a P-Channel Enhancement Mode MOSFET from Taiwan Semiconductor, housed in a compact SOT-23-3 SMD/SMT package. Rated at 60V drain-source breakdown voltage and 3.1A continuous drain current, it is ideal for load switching, power management, and signal routing applications in space-constrained designs.

• Part Number: TSM2309CX RFG
• Manufacturer: Taiwan Semiconductor
• Type: P-Channel Enhancement Mode MOSFET
• Technology: Silicon (Si)
• Package: SOT-23-3
• Mounting Style: SMD/SMT
• Drain-Source Breakdown Voltage (Vds): 60V
• Continuous Drain Current (Id): 3.1A
• Drain-Source Resistance (RDS on): 160 mΩ
• Gate-Source Threshold Voltage (Vgs th): 1.2V
• Gate Charge (Qg): 8.2 nC
• Power Dissipation (Pd): 1.56W
• Rise Time: 19 ns
• Fall Time: 10.6 ns
• Turn-On Delay Time: 5.2 ns
• Turn-Off Delay Time: 35 ns
• Number of Channels: 1
• Configuration: Single
• Operating Temperature: -50°C to +150°C
• Unit Weight: 8 mg